蔡月飞博士于2022年7月加入南方科技大学电子与电气工程系，主要从事宽禁带半导体的研究，包括氮化镓电子器件和光电子器件的设计、制备、表征和集成。目前已在化合物半导体领域的顶级国际会议IWN，ICNS和CSW上做口头报告3次，在ACS Nano, ACS Photonics, IEEE EDL, APL等高水平期刊上发表论文20余篇，其成果得到了国际知名科技媒体IEEE spectrum, Semiconductor Today和Compound Semiconductor的专题报道, 也获得了内外同行的高度评价。此外还担任OSA旗下Photonics Research期刊的审稿人，是IEEE和OSA的会员。

教育经历

2013.09-2018.06 香港科技大学，电子与计算机工程系，工学博士

2011.09-2013.07 哈尔滨工业大学，物理电子学，工学硕士（学术型，推免）

2007.09-2011.07 哈尔滨工业大学，电子科学与技术，工学学士

工作经历

2022.07- 至今        南方科技大学，电子与电气工程系，助理教授

2021.09-2022.07  嘉庚创新实验室，厦门市未来显示技术研究院，副研究员

2018.03-2021.06  英国谢菲尔德大学，电子与电气工程系，博士后副研究员

研究简介

宽禁带半导体器件，

氮化镓HEMT和LED的集成，

氮化镓新型声光电器件

代表文章

1. Y. Cai, C. Zhu, W. Zhong, P. Feng, S. Jiang and T. Wang, "Monolithically integrated µLEDs/HEMTs microdisplay on a single chip by a direct epitaxial approach", Advanced Materials Technologies, vol.6, no.6, 2100214(2021).(Reported byCompound Semiconductor and LEDInside ) 

2. Y. Cai, J. I. Haggar, C. Zhu, P. Feng, J. Bai and T. Wang, "Direct epitaxial approach to achieve a monolithic on-chip integration of a HEMT and a single Micro-LED with a high modulation bandwidth", ACS Applied Electronic Materials, vol.3, no.1, pp.445-450 (2021).

3. J. Bai, Y. Cai, P. Feng, P. Fletcher, C. Zhu, Y. Tian, and T. Wang, "Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width",  ACS Nano, vol. 14, no. 6, pp.6906- 6911 (2020).(Reported byCompound Semiconductor)

4.Y. Cai, S. Shen, C. Zhu, X. Zhao, J.Bai and T. Wang, "Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon," ACS Applied Materials & Interfaces, vol. 12, no. 22, pp.25031-25036 (2020).

5. S. Jiang#, Cai#, P. Feng, S. Shen, X. Zhao, P. Flecher, V. Esendag, K. B. Lee and T. Wang, "Exploringan approach towards the intrinsic limits of GaN electronics," ACS Applied Materials & Interfaces, vol. 12, no. 11, pp.12949-12954 (2020).(#: Co-author with equal contributions) 

6. J.Bai, Y. Cai, P. Feng, P. Fletcher,X. Zhao, C. Zhu and T. Wang, "A direct epitaxial approach to achieving ultra-small and ultra-bright InGaN-based micro light emitting diodes (µLEDs)," ACS Photonics,vol. 7, no. 2, pp. 411-415 (2020).  

7. C.Liu, Y. Cai, H. Jiang, and K. M. Lau, "Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy,"Optics Letters, vol. 43, no. 14, pp. 3401-3404 (2018). (Reported bySemiconductor Today)

8. Y.Cai, X. Zou, C. Liu, and K. M. Lau, "Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters," IEEE Electron Device Letters, vol. 39, no.2, pp. 224-227 (2018). (Featured in IEEE Spectrum)

9. Y.Cai, X. Zou, Y. Gao, L. Li, P. K. T. Mok, and K. M. Lau, "Low-flicker lighting from high-voltage LEDs driven by a single converter-free driver," IEEE Photonics Technology Letters, vol. 29, no.19, pp. 1675-1678 (2017).

10. C.Liu#, Y. F. Cai#, Z. J. Liu, J. Ma, and K. M. Lau, "Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors," Applied Physics Letters, vol. 106,no.18, pp.181110 (2015). (#: Co-author with equal contributions) (Featured in Semiconductor Today)