宽禁带半导体（如GaN, SiC, Ga2O3）器件可以突破传统硅基器件的理论极限，是新⼀代电⼒电⼦器件的重要发展⽅向。化梦媛博士致力于宽禁带半导体器件与IC研究，在高端制造工艺、测试表征技术、器件结构设计、可靠性等方面做出一系列原创性和系统性的工作。共发表国际高水平期刊与会议论文90余篇，引用超1900次，h因子22。成果包括国际电子器件领域的顶级峰会IEEE IEDM论文7篇，电力电子领域旗舰会议IEEE ISPSD论文11篇，为国际会议做邀请报告10余次；发表器件领域顶级期刊IEEE Electron Device Lett. 15篇，IEEE Trans. Electron Devices 8篇，多次选入热点论文，被产业界权威杂志专题报道。获2020年IEEE ICSICT杰出青年科技论文奖；获2017年IEEE ISPSD最佳青年学者奖；现任国际高水平期刊IEEE Trans. Electron Devices编辑。申请发明专利6项，主持省部级项目2项。

教育经历

2013-2017：香港科技大学，电子与计算机工程系，博士学位

2009-2013：清华大学，数学物理基础科学班，学士学位

工作经历

2024.05-至今：南方科技大学，电子与电气工程系，副教授/研究员  

2018.09-2024.04：南方科技大学，电子与电气工程系，助理教授/副研究员

2017.09-2018.09： 香港科技大学，电子与计算机工程系，博士后

研究简介

·  宽禁带半导体器件

·  氮化镓电⼒电⼦器件

·  半导体器件⼯艺

·  半导体器件物理

·  可靠性

·  功率集成电路

·  新一代小型化电源应用

所获荣誉

· 国家高层次人才特殊支持计划，2023

· IEEE ICSICT “杰出青年科技论文奖” , 2020

· 深圳市海外⾼层次⼈才“孔雀计划”，2019

· IEEE TED⾦牌审稿⼈，2018-2023

· IEEE EDL⾦牌审稿⼈，2019-2023

· IEEE ISPSD “最佳青年学者奖” （年度唯一获奖人），2017

代表文章

Papers published (*corresponding author, #co-first author, supervised student/postdoc):

1. Z. Jiang, X. Wang, J. Zhao, J. Chen, J. Tang, C. Wang, H. Chen, S. Huang, X. Chen, and M. Hua*, "Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures," in IEEE Electron Device Letters, vol. 44, no. 10, pp. 1612-1615, Oct. 2023, doi: 10.1109/LED.2023.3311395.

2. J. Zhao*, J. Byggmästar, H. He, K. Nordlund, F. Djurabekova, and M. Hua*, "Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials," in npj Computational Material, vol. 9, no. 159, Sep. 2023, doi: 10.1038/s41524-023-01117-1.

3. J. Chen, J. Zhao, S. Feng, L. Zhang, Y. Cheng, H. Liao, Z. Zheng, X. Chen, Z. Gao, K. Chen, and M. Hua*, "Formation and applications in electronic devices of lattice-aligned gallium oxynitride nanolayer on gallium nitride," in Advanced Materials, vol. 35, no. 12, pp. 2208960, Jan. 2023, doi: 10.1002/adma.202208960. (frontispiece)

4. Z. Jiang, L. Li, C. Wang, J. Ma, Z. Liu, and M. Hua*, "Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT," in IEEE Transactions on Electron Devices, vol. 69, no. 7, pp. 3654-3659, July 2022, doi: 10.1109/TED.2022.3177397.

5. H. Chen, J. Zhao, X. Wang, X. Chen, Z. Zhang*, and M. Hua*, "Two-dimensional ferroelectric MoS2/Ga2O3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties," in Nanoscale, vol. 14, pp. 5551-5560, Mar. 2022, doi: 10.1039/D2NR00466F.

6. J. Zhao*, X. Wang, H. Chen, Z. Zhang*, and M. Hua*, "Two-dimensional Ferroelectric Ga2O3 Bilayers with Unusual Strain-engineered Interlayer Interactions," in Chemistry of Materials, vol. 34, no. 8, pp. 3648-3658, Apr. 2022, doi: 10.1021/acs.chemmater.1c04245. (cover page)

7. Z. Jiang, M. Hua*, X. Huang, L. Li, C. Wang, J. Chen, and K. Chen, "Negative Gate Bias Induced Dynamic On-Resistance Degradation in Schottky-Type p-GaN Gate HEMTs," in IEEE Transactions on Power Electronics, vol. 37, no. 5, pp. 6018-6025, Nov. 2021, doi: 10.1109/TPEL.2021.3130767.

8. J. Zhao*, J. Byggmästar, Z. Zhang, F. Djurabekova, K. Nordlund, and M. Hua*, "Phase transition of two-dimensional ferroelectric and paraelectric Ga2O3 monolayers: A density functional theory and machine learning study," in Phys. Rev. B, vol. 104, no. 5, p. 054107, Aug. 2021, doi: 10.1103/PhysRevB.104.054107.

9. J. Zhao, X. Huang, Y. Yin, Y. Liao, H. Mo, Q. Qian, Y. Guo, X. Chen, Z. Zhang*, and M. Hua*, "Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application," in Journal of Physical Chemistry Letters, vol. 12, no. 24, pp. 5813–5820, June 2021, DOI: 10.1021/acs.jpclett.1c01393. 

10. J. Chen, M. Hua*, C. Wang, L. Liu, L. Li, J. Wei, L. Zhang, Z. Zheng, K. Chen, "Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs," in IEEE Electron Device Letters, vol. 42, no. 7, pp. 986-989, July 2021, doi: 10.1109/LED.2021.3077081.

11. M. Hua*, C. Wang, J. Chen, J. Zhao, S. Yang, L. Zhang, Z. Zheng, J. Wei, K. Chen, "Gate Current Transport in Enhancement-mode p-n Junction/AlGaN/GaN (PNJ) HEMT," in IEEE Electron Device Letters, vol. 42, no. 5, pp. 669-672, May 2021, doi: 10.1109/LED.2021.3068296. 

12. J. Chen, M. Hua*, J. Wei, J. He, C. Wang, Z. Zheng, and K. Chen, "OFF-state Drain-voltage-stress-induced VTH Instability in Schottky-type p-GaN Gate HEMTs," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 3, pp. 3686-3694, June 2021, doi: 10.1109/JESTPE.2020.3010408.

13. Y. Liao, Z. Zhang*, Z. Gao, Q. Qian, and M. Hua*, "Tunable Properties of Novel Ga2O3 Monolayer for Electronic and Optoelectronic Applications," in ACS Appl. Mater. Interfaces, vol. 12, no. 27, pp. 30659–30669, Jul. 2020, doi: 10.1021/acsami.0c04173. 

14. C. Wang, M. Hua*, J. Chen, S. Yang, Z. Zheng, J. Wei, L. Zhang, and K. Chen, "E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs," in IEEE Electron Device Letters, vol. 41, no. 4, pp. 545-548, April 2020, doi: 10.1109/LED.2020.2977143.

15. J. Tang#, Z. Jiang#, C. Wang, J. Chen, H. Chen, Y. Zhang, Z. Zheng, X. Wang, J. Ma, J. Zhao, J. Liu, Q. Sun, and M. Hua*, "Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform," in 2023 IEEE International Electron Devices Meeting (IEDM), December 9-13, 2023.

16. C. Wang, H. Chen, Z. Jiang, J. Chen, and M. Hua*, "Impacts of n-GaN Doping Concentration on Gate Reliability of p-n Junction/AlGaN/GaN HEMTs," 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 28-June 1, 2023.

17. J. Chen, T. Chen, Z. Jiang, C. Wang, Z. Zheng, J. Wei, K. Chen, and M. Hua*, "Switching Performance of GaN p-FET-bridge (PFB-) HEMTs Studied with Mixed-mode Device/Circuit Simulations," 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 28-June 1, 2023.

18. X. Wang, Z. Jiang, J. Chen, J. Zhao, H. Wang, C. Wang, H. Chen, J. Ma, X. Chen, and M. Hua*, "Threshold Voltage Instability of Schottky-type p-GaN Gate HEMT down to Cryogenic Temperatures," 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 28-June 1, 2023.

19. M. Hua*, J. Chen, C. Wang, L. Liu, J. Wei, L. Zhang, Z. Zheng, and K. Chen, "E-mode p-FET-bridge HEMT for Higher VTH and Enhanced Stability," 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, December 12-18, 2020, pp. 23.1.1-23.1.4, doi: 10.1109/IEDM13553.2020. 9371969. 

20. Z. Jiang, M. Hua*, X. Huang, L. Li, J. Chen and K. Chen, "Impact of OFF-state Gate Bias on Dynamic RON of p-GaN Gate HEMT," 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, May 30-June 3, 2021, pp. 47-50, doi: 10.23919/ISPSD50666.2021.9452256.

21. J. Chen, M. Hua*, J. Jiang, J. He, J. Wei, and K. Chen, "Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-bias Stress," 2020 32nd Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep. 3-7, 2020, pp.18-21, doi: 10.1109/ISPSD46842.2020.9170043.

22. J. Chen, C. Wang, J. Jiang and M. Hua*, "Investigation of Time-Dependent VTH Instability Under Reverse-bias Stress in Schottky Gate p-GaN HEMT," 2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), Nanjing, China, 2020, pp. 142-145, doi: 10.1109/IPEMC-ECCEAsia48364.2020.9367779.

23. C. Wang, M. Hua*, S. Yang, L. Zhang, and K. Chen, "E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability," 2020 32nd Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep. 3-7, 2020, pp.18-21, doi: 10.1109/ISPSD46842.2020.9170039.

24. M. Hua, S. Yang, Z. Zheng, J. Wei, Z. Zhang, and K. Chen, "Effects of Substrate Termination on Reverse-Bias Stress Reliability of Normally-Off Lateral GaN-on-Si MIS-FETs," 2019 31st Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, May 19-23, 2019, pp. 467-470, doi: 10.1109/ISPSD.2019.8757600. 

25. M. Hua, X. Cai, S. Yang, Z. Zhang, Z. Zheng, J. Wei, N. Wang, and K. Chen, "Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaOxN1-x Channel," in 2018 IEEE International Electron Devices Meeting (IEDM), Dec. 1-5, 2018, pp. 30.3.1-30.3.4, doi: 10.1109/IEDM.2018.8614687. 

26. M. Hua, J. Wei, Q. Bao, Z. Zhang, J. He, Z. Zheng, J. Lei, and K. Chen, "Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs," 2017 Int. Electron Device Meeting (IEDM), San Francisco, CA, USA, Dec. 2-6, 2017, pp. 33.2.1-33.2.4, doi: 10.1109/IEDM. 2017.8268489.

27. M. Hua, Q. Qian, J. Wei, Z. Zhang, G. Tang, and K. J. Chen, "PBTI and NBTI of Fully-recessed E-mode LPCVD-SiNx/GaN MIS-FETs with PECVD-SiNx Interfacial Protection Layer," 12th Int. Conf. on Nitride Semiconductors (ICNS-12), Strasbourg, France, July 24-28, 2017.

28. M. Hua, Z. Zhang, Q. Qian, J. Wei, Q. Bao, G. Tang, and K. J. Chen, "High-performance Fully-recessed Enhancement-mode GaN MIS-FETs with Crystalline Oxide Interlayer," 2017 29th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Sapporo, Japan, May 28-June 1, 2017, pp. 89-92, doi: 10.23919/ISPSD.2017.7988900.

29. M. Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "TDDB and PBTI Characterizations of Fully-recessed E-mode GaN MIS-FETs with LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack," CS MANTECH Conference, Indian Wells, California, USA, May 22-25, 2017.

30. M. Hua, Z. Zhang, J. Wei, J. Lei, G. Tang, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Integration of LPCVD-SiNx Gate Dielectric with Recessed-gate E-mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime," 2016 Int. Electron Device Meeting (IEDM), San Francisco, CA, USA, Dec. 5-7, 2016, pp. 10.4.1-10.4.4, doi: 10.1109/IEDM.2016.7838388. 

31. M. Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Compatibility of AlN/SiNx Passivation with High-Temperature Process," 2016 CS MANTECH Conference, Miami, Florida, USA, May 16-19, 2016.

32. M. Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, "Gate Leakage and Time-Dependent Dielectric Breakdown Characteristics of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs," 2015 11th Int. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4, 2015.

M. Hua, C. Liu, S. Yang, S. Liu, Y. Lu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, "650-V GaN-Based MIS-HEMTs Using LPCVD-SiNx as Passivation and Gate Dielectric," 2015 27th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 10-14, 2015, pp. 241-244, doi: 10.1109/ISPSD.2015.7123434. 

招聘信息

本课题组目前正在招聘研究助理教授、博士后、科研助理、博士生、硕士生，同时欢迎来自国内外的优秀访问学者和交流学生，有意加入者请将简历发送至：huamy@sustech.edu.cn。

联系方式

地址：深圳市南山区南方科技大学工学院南楼226

电邮：huamy@sustech.edu.cn