2013. Ph.D. Department of Materials Science and Engineering, South China University of Technology
2008. B.A. Department of Materials Science and Engineering, Southwest University 

2023.8-Present，Research Professor, Southern University of Science and Technology
2019.4-2023.7，Research Associate Professor, Southern University of Science and Technology
2013.7-2018.12，Successively served as Divisional Manager, R&D manager, and Director of manufacturing department, Sino Nitride Semiconductor Ltd.
2013.9-2016.5，Postdoctor, Department of Physics, Sun Yat-Sen University

GaN devices & power system
GaN RF devices & power amplifier

2023，Second Prize of Innovation Award of China Invention Association (ranked second)
2021，Distinctive Talent of Shenzhen City
2021，"Outstanding Communist Party Member", College of Engineering, Southern University of Science and Technology
2019，"Annual outstanding contribution award" of the third generation semiconductor industry technological innovation strategic alliance

Selected Publication：
1.Yang Jiang, Wenmao Li, Fangzhou Du, Robert Sokolovskij, Yi Zhang, Shuhui Shi, Weiguo Huang, Qing Wang,* Hongyu Yu* and Zhongrui Wang*. “Comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses”, Journal of Materials Chemistry C, 2023, accepted.
2.Chuying Tang, Chun Fu, Yang Jiang, Minghao He, Chenkai Deng, Kangyao Wen; Jiaqi He, Peiran Wang, Fangzhou Du, Yi Zhang, Qiaoyu Hu; Nick Tao; Qing Wang* and HongYu Yu*，" Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity". Applied Physics Letters， Vol.123, Issue 9, 092104 (2023).
3.Jiaqi He, Kangyao Wen, Peiean Wang, Minghao He, Fangzhou Du, Yang Jiang, Chuying Tang, Nick Tao, Qing Wang*, Gang Li*, and Hongyu Yu*, Interface charge engineering on an in-situ SiNx/AlGaN/GaN platform for normally-off GaN MIS-HEMTs with improved breakdown performance, Applied Physics Letters (2023), accepted.
4.Minghao He ; Kangyao Wen; Chenkai Deng; Mujun Li; Yifan Cui; Qing Wang* ; Hongyu Yu*; Kah-Wee Ang*; "Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET," in IEEE Transactions on Electron Devices, vol. 70, no. 6, pp. 3191-3195, June 2023.
5.Chenkai Deng, Wei-Chih Cheng, XiGuang Chen, KangYao Wen, MingHao He, ChuYing Tang, Peiran Wang, Qing Wang*, HongYu Yu*; Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation. Applied Physics Letters. 5 June 2023; 122 (23): 232107.
6.Yang Jiang, Dingchen Wang, Ning Lin, Shuhui Shi, Yi Zhang, Shaocong Wang, Xi Chen, Hegan Chen, Yinan Lin, Kam Chi Loong, Jia Chen, Yida Li, Renrui Fang, Dashan Shang*, Qing Wang*, Hongyu Yu* and Zhongrui Wang*. “Spontaneous Threshold Lowering Neuron using Second-Order Diffusive Memristor for Self-Adaptive Spatial Attention”, Advanced Science, 2023, 2301323.
7.Honghao Lu, Kangyao Wen, Fangzhou Du, Chuying Tang, Wei-Chih Cheng, Bowen Wei, Honglin Li, Qing Wang*, Hongyu Yu*. "Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering", Materials Science in Semiconductor Processing, 154(2023): 107221
8.Chu-Ying Tang, Hong-Hao Lu, Ze-Peng Qiao, Yang Jiang, Fang-Zhou Du, Jia-Qi He, Yu-Long Jiang*, Qing Wang*, and Hong-Yu Yu*, Ohmic Contact with a Contact Resistivity of 12 Ω·mm on p-GaN/AlGaN/GaN, IEEE Electron Device Letters, 2022, 43(9): 1412–1415.
9.Yang Jiang, FangZhou Du, JiaQi He, ZePeng Qiao, ChuYing Tang, XinYi Tang, ZhongRui Wang, Qing Wang*, HongYu Yu*，"Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance". Applied Physics Letters. 121, 212105 (2022)
10.Wei-Chih Cheng, Jiaqi He, Minghao He, Zepeng Qiao, Yang Jiang, Fangzhou Du, Xiang Wang, Haimin Hong, Qing Wang*, and Hongyu Yu*.” Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications”. Journal of Vacuum Science and Technology B, 2022, 40(2)
11.Fangzhou Du, Yang Jiang, Zepeng Qiao, Zhanxia Wu, Chuying Tang, Jiaqi He, Guangnan Zhou, Wei-Chih Cheng, Xinyi Tang, Qing Wang*, and Hongyu Yu*. “Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer.” Materials Science in Semiconductor Processing: 143, 2022.
12.Yi Zhang , Yi Deng , Yinan Lin , Yang Jiang , Yujiao Dong , Xi Chen , Guangyi Wang ,Dashan Shang , Qing Wang *, Hongyu Yu * and Zhongrui Wang *, “Oscillator-Network-Based Ising Machine”, Micromachines (Basel). 2022 Jun 27;13(7):1016. 2022, 13(7)
13.Jiaqi He; Wei-Chih Cheng; Yang Jiang; Mengya Fan; Guangnan Zhou; Gaiying Yang; Lingli Jiang; Xiang Wang; Zhanxia Wu; Qing Wang*; Hongyu Yu*. Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiNx caps[J]. Materials Science in Semiconductor Processing, 2021, 132(6798):105907.
14.Wei-Chih Cheng; Fanming Zeng; Minghao He; Qing Wang*; Mansun Chan; Hongyu Yu*. (2020). Quasi-Normally-Off AlGaN/GaN HEMTs with SiNx Stress Liner and Comb Gate for Power Electronics Applications. IEEE Journal Of The Electron Devices Society,8, 1138-1144.

English Book：
1. Wang Qing, Yu Gang, Wang Jian, Organic Light-Emitting Materials and Devices (Chapter 1), CRC Press, ISBN-13: 978-1-4398-8223-8, 2015.