学校|图书馆
统一认证登录 | 登录 | English| RSS Feeds | Atom Feeds
中文版 | English
   注册
个人简历
科研成果
统计分析
访问统计
月访问量

98

  • 内部： 0

  • 外部： 98

  • 国内： 86

  • 国外： 12

年访问量

2050

  • 内部： 4

  • 外部： 2046

  • 国内： 2011

  • 国外： 39

总访问量

8598

  • 内部： 124

  • 外部： 8474

  • 国内： 8338

  • 国外： 260

访问量
访问量
1. A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorph.. [1145]
2. Trap behaviours characterization of AlGaN/GaN high electron mobili.. [627]
3. Oxygen-based digital etching of AlGaN/GaN structures with AlN as e.. [395]
4. Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Com.. [283]
5. AlGaN/GaN HEMT micro-sensor technology for gas sensing application.. [257]
6. Investigation of Band Alignment for Hybrid 2D-MoS2/3D-beta-Ga2O3 H.. [231]
7. Achieving A Low Contact Resistivity of 0.11 Ω·mm for Ti5Al1/TiN .. [224]
8. Phosphor-Based InGaN/GaN White Light-Emitting Diodes With Monolith.. [223]
9. Enhanced Si thin film solar cells short-circuit current with ratio.. [220]
10. Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs.. [215]
11. The transport properties of oxygen vacancy-related polaron-like bo.. [211]
12. Low leakage GaN HEMTs with sub-100 nm T-shape gates fabricated by.. [209]
13. Oxide-based RRAM: A novel defect-engineering-based implementation .. [206]
14. A neuromorphic visual system using RRAM synaptic devices with Sub-.. [205]
15. A 56-Gb/s PAM4 Continuous-Time Linear Equalizer with Fixed Peaking.. [204]
16. Gate Leakage Suppression and Breakdown Voltage Enhancement in p-Ga.. [203]
17. Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Tran.. [201]
18. Increasing threshold voltage and reducing leakage of AlGaN/GaN HEM.. [196]
19. Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the a.. [196]
20. Low-frequency noise in oxide-based (TiN/HfO x/Pt) resistive random.. [193]
21. Recent Advances in GaN-Based Power HEMT Devices [193]
22. Mechanism of Different Switching Directions in Graphene Oxide Base.. [191]
23. A Comprehensive Review of Recent Progress on GaN High Electron Mob.. [188]
24. Investigations of Conduction Mechanisms of the Self-Rectifying n(+.. [188]
25. Observation of the Ambient Effect in BTI Characteristics of Back-G.. [188]
26. Au-based and Au-free ohmic contacts to AlGaN/GaN structures on sil.. [187]
27. Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis b.. [186]
28. Stochastic learning in oxide binary synaptic device for neuromorph.. [184]
29. Reducing dynamic on-resistance of p-GaN gate HEMTs using dual fiel.. [183]
30. Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measu.. [182]
31. Highly efficient up-conversion in Nd:Y2O3 transparent ceramics [182]
32. A self-rectifying and forming-free HfOx based-high performance uni.. [182]
33. Impact of high temperature H-2 pre-treatment on Pt-AlGaN/GaN HEMT .. [180]
34. Trap behaviours characterization of AlGaN/GaN high electron mobili.. [179]
35. Ultra-Low Contact Resistivity of < $0.1~\Omega\cdot$ mm for Au-Fre.. [178]
36. Influence of feedstock concentration on tetragonality and particle.. [177]
37. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminu.. [177]
38. Silicon nitride stress liner impacts on the electrical characteris.. [177]
39. Highly Uniform, Self-Compliance, and Forming-Free ALD HfO2-Based R.. [176]
40. Performance of InGaN green light-emitting diodes with on-chip phot.. [176]
41. Planar Bulk MOSFETs With Self-Aligned Pocket Well to Improve Short.. [174]
42. Enhanced dielectric properties of BaTiO3 based on ultrafine powder.. [172]
43. Investigation of AlGaN/GaN HEMTs degradation with gate pulse stres.. [171]
44. Endurance Degradation in Metal Oxide-Based Resistive Memory Induce.. [171]
45. Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-s.. [170]
46. Design guidelines for (111) Si inclined nanohole arrays in thin fi.. [168]
47. A Novel Defect-Engineering-Based Implementation for High-Performan.. [167]
48. Blue cooperative up-conversion luminescence of Yb:Y2O3 transparent.. [166]
49. Pt-AlGaN/GaN HEMT-sensor layout optimization for enhancement of hy.. [163]
50. A Study on Graphene-Metal Contact [163]
51. Positive Bias-Induced V-th Instability in Graphene Field Effect Tr.. [163]
52. Overshoot Stress on Ultra-Thin HfO2 High-kappa Layer and Its Impac.. [161]
53. A Novel Self-Selection Bipolar RRAM Cell with Ultra-Low Operation .. [160]
54. Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/Ga.. [160]
55. Silicon Nitride Stress Liner Impacts on the Electrical Characteris.. [160]
56. Current Conduction Model for Oxide-Based Resistive Random Access M.. [158]
57. Characterization of trap behaviors in AlGaN/GaN MIS-HEMT via Trans.. [157]
58. Design Guidelines for Si(111) Inclined Nanohole Arrays in Thin-Fil.. [157]
59. Light trapping in hybrid nanopyramid and nanohole structure silico.. [156]
60. Phase and Microstructural Transformation of BaTiO3 Powder Synthesi.. [156]
61. Recent Advances in beta-Ga2O3-Metal Contacts [153]
62. Improvement of β-Ga2O3 MIS-SBD Interface Using Al-Reacted Interfa.. [153]
63. A Self-Compliant One-Diode-One-Resistor Bipolar Resistive Random A.. [152]
64. Fluid driven self-assembly of woven Ag nanowire grid for ultra-fle.. [151]
65. Low-Dimensional Contact Layers for Enhanced Perovskite Photodiodes [148]
66. Distinguishing various influences on the electrical properties of .. [148]
67. Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar.. [146]
68. The Impact of Gate Recess on the H₂ Detection Properties of Pt-Al.. [145]
69. Femtosecond laser fabrication of large-area periodic surface rippl.. [144]
70. Application of a gateless AlGaN/GaN HEMT sensor for diesel soot pa.. [143]
71. Design and mechanism of cost-effective and highly efficient ultrat.. [142]
72. Study on the Optimization of Off-State Breakdown Performance of p-.. [142]
73. Overshoot Stress Impact on HfO2 High-kappa Layer Dynamic SILC [140]
74. Machine learning and Silicon Photonic Sensor for Complex Chemical .. [140]
75. A new wet etching method for black phosphorus layer number enginee.. [138]
76. Oscillator-Network-Based Ising Machine [138]
77. Conduction Mechanism of Self-Rectifying n(+)Si-HfO2-Ni RRAM [137]
78. Characteristics of low frequency noise in n+Si-HfO.. [137]
79. Dielectric screening in perovskite photovoltaics [137]
80. Ultrathin hafnium-based high-K dielectrics for High-K-last/ gate-l.. [136]
81. A Self-Rectifying AlOy Bipolar RRAM With Sub-50-mu A Set/Reset Cur.. [135]
82. Improving the drive current of AlGaN/GaN HEMT using external strai.. [135]
83. Microscopic formation mechanism of Si/Tl5Al1.. [135]
84. A Self-Rectifying and Forming-Free HfOx based-High Performance Uni.. [134]
85. Oxygen-plasma-based digital etching for GaN/AlGaN high electron mo.. [133]
86. Femtosecond laser induced nanocone structure and simultaneous crys.. [132]
87. A High-resolution Dual-microring-based Silicon Photonic Sensor usi.. [132]
88. Perspective of flash memory realized on vertical Si nanowires [131]
89. Vth Shift in Single-Layer Graphene Field-Effect Transistors and It.. [130]
90. CHARACTERISTICS OF LOW FREQUENCY NOISE IN n(+)Si-HfO2-Ni RESISTIVE.. [129]
91. Nanoscale resistive random access memory: Materials, devices, and .. [129]
92. Very-Low Resistance Contact to 2D Electron Gas by Annealing Induce.. [129]
93. Low frequency noise in tunneling field effect transistors [128]
94. System in package (SiP) technology: fundamentals, design and appli.. [127]
95. A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi Electrode [124]
96. Quasi-Normally-Off AlGaN/GaN HEMTs with Strained Comb Gate for Pow.. [124]
97. Convolutional Echo-State Network with Random Memristors for Spatio.. [124]
98. Nanohole Structure as Efficient Antireflection Layer for Silicon S.. [121]
99. p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Dop.. [118]
100. Atomic layer etching technique for InAlN/GaN heterostructure with .. [114]
下载量
1. Oxygen-based digital etching of AlGaN/GaN structures with AlN as e.. [5]
2. The transport properties of oxygen vacancy-related polaron-like bo.. [2]
3. Stochastic learning in oxide binary synaptic device for neuromorph.. [2]
4. Trap behaviours characterization of AlGaN/GaN high electron mobili.. [2]
5. Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Com.. [2]
6. Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the a.. [2]
7. Oscillator-Network-Based Ising Machine [2]
8. AlGaN/GaN HEMT micro-sensor technology for gas sensing application.. [1]
9. A Comprehensive Review of Recent Progress on GaN High Electron Mob.. [1]
10. Investigation of AlGaN/GaN HEMTs degradation with gate pulse stres.. [1]
11. Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/Ga.. [1]
12. Trap behaviours characterization of AlGaN/GaN high electron mobili.. [1]
13. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminu.. [1]
14. A Study on Graphene-Metal Contact [1]
15. Design and mechanism of cost-effective and highly efficient ultrat.. [1]
16. Investigation of Band Alignment for Hybrid 2D-MoS2/3D-beta-Ga2O3 H.. [1]
17. Reducing dynamic on-resistance of p-GaN gate HEMTs using dual fiel.. [1]
18. Achieving A Low Contact Resistivity of 0.11 Ω·mm for Ti5Al1/TiN .. [1]
19. Convolutional Echo-State Network with Random Memristors for Spatio.. [1]
20. Analog HfxZr1-xO2 Memristors with Tunable Linearity for Implementa.. [1]
Baidu
map