Observing suppressed polarization in flexible ferroelectric negative capacitance field effect transistors

Ren，Chuanlai1,2; Dai，Liyufen1,3; Tan，Congbing2,4; Yuan，Guangtong2,5; Qu，Ke1; Wang，Jinbin3; Zhong，Xiangli3; Huang，Mingqiang1; Dai，Jiyan6; Zhong，Gaokuo1,2; Li，Jiangyu1,2,5

2024-07-01

10.1016/j.jmat.2023.09.008

Journal of Materiomics   影响因子和分区

2352-8478

2352-8486

Negative capacitance (NC) has the potential to enable low power microelectronics beyond the fundamental thermionic limit, and it has been theorized that the thermodynamically unstable NC of ferroelectrics can be stabilized by linear dielectric, making negative capacitance ferroelectric field effect transistors (NC-FeFET) possible. Nevertheless, the validity of NC as a physical concept for ferroelectrics remain contentious despite numerous theoretical and experimental investigations, and the intrinsic ferroelectric NC with suppressed polarization has not been demonstrated except locally at vortex core. While NC-FeFET with subthreshold swing (SS) lower than 60 mV/dec limit has been reported, such device characteristics has not been directly connected to suppressed polarization at materials’ level, and alternative mechanisms other than NC have also been proposed. Here we demonstrate stable sub-60 mV/dec SS with hysteresis free I–V in NC-FeFET based on SrTiO/Pb(ZrTi)O/SrTiO heterostructure, and observe its suppressed polarization at both macroscopic and microscopic scales. The intrinsic ferroelectric NC thus is experimentally confirmed and directly connected to NC-FeFET performance, and the mica-based device is also highly flexible and robust under cyclic bending as well as extended heating.

Ferroelectric Mica Negative capacitance field-effect transistors Pulse laser deposition

英语

通讯

2-s2.0-85178586894

Scopus

1.Shenzhen Institutes of Advanced Technology,Chinese Academy of Sciences,Shenzhen,Guangdong,518055,China
2.Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
3.School of Materials Science and Engineering,Xiangtan University,Xiangtan,Hunan,411105,China
4.School of Physics and Electronics,Hunan University of Science and Technology,Xiangtan,Hunan,411201,China
5.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
6.Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong,999077,China

Ren，Chuanlai,Dai，Liyufen,Tan，Congbing,et al. Observing suppressed polarization in flexible ferroelectric negative capacitance field effect transistors[J]. Journal of Materiomics,2024,10(4):762-769.

Ren，Chuanlai.,Dai，Liyufen.,Tan，Congbing.,Yuan，Guangtong.,Qu，Ke.,...&Li，Jiangyu.(2024).Observing suppressed polarization in flexible ferroelectric negative capacitance field effect transistors.Journal of Materiomics,10(4),762-769.

Ren，Chuanlai,et al."Observing suppressed polarization in flexible ferroelectric negative capacitance field effect transistors".Journal of Materiomics 10.4(2024):762-769.