Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe

Zhao, Li-Dong1; Zhang, Xiao1; Wu, Haijun2,3; Tan, Gangjian4; Pei, Yanling1; Xiao, Yu1; Chang, Cheng1; Wu, Di2,3; Chi, Hang5; Zheng, Lei1; Gong, Shengkai1; Uher, Ctirad5; He, Jiaqing2,3; Kanatzidis, Mercouri G.4

2016-02-24

10.1021/jacs.5b13276

Journal of the American Chemical Society   影响因子和分区

0002-7863

We report enhanced thermoelectric performance in SnTe, where significantly improved electrical transport properties and reduced thermal conductivity were achieved simultaneously. The former was obtained from a larger hole Seebeck coefficient through Fermi level tuning by optimizing < 0.2 the carrier concentration with Ga, In, Bi, and Sb dopants, resulting in a power factor of mu W cm(-1) K-2 and ZT of 0.9 at 823 K in Sn0.97Bi0.03.Te.. To reduce the lattice thermal conductivity without deteriorating the hole carrier mobility in Sn0.97Bi0.03Te, SrTe was chosen as the second phase to create strained endotaxial nanostructures as phonon scattering centers. As a result, the lattice thermal conductivity decreases strongly from similar to 2.0 Wm(-1) K-1 for Sn0.97Bi0.03Te to X1.2 Wm(-1) as the SrTe content is increased from 0 to 5.0% at room temperature and from similar to 1.1 to -,0.70 Wm-1 IC' at 823 K. For the Sn0.97Bi0.03Te-3% SrTe sample, this leads to a ZT of 1.2 at 823 K and a high average ZT (for SnTe) of 0.7 in the temperature range of 300-823 K, suggesting that SnTe is a robust candidate for medium temperature thermoelectric applications.

SCI ; EI

英语

NI期刊 ; NI论文 ; ESI高被引

其他

Guangdong Science and Technology Fund[2015A030308001]

Chemistry

Chemistry, Multidisciplinary

WOS:000371103900049

AMER CHEMICAL SOC

20161002045497

Bismuth compounds ; Crystal lattices ; Doping (additives) ; Hole concentration ; Hole mobility ; IV-VI semiconductors ; Strontium compounds ; Thermal conductivity ; Thermoelectricity ; Tin compounds

Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Crystal Lattice:933.1.1

Web of Science

1.Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
2.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
3.South Univ Sci & Technol China, Shenzhen Key Lab Thermoelect Mat, Shenzhen 518055, Peoples R China
4.Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA
5.Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

Zhao, Li-Dong,Zhang, Xiao,Wu, Haijun,et al. Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe[J]. Journal of the American Chemical Society,2016,138(7):2366-2373.

Zhao, Li-Dong.,Zhang, Xiao.,Wu, Haijun.,Tan, Gangjian.,Pei, Yanling.,...&Kanatzidis, Mercouri G..(2016).Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe.Journal of the American Chemical Society,138(7),2366-2373.

Zhao, Li-Dong,et al."Enhanced Thermoelectric Properties in the Counter-Doped SnTe System with Strained Endotaxial SrTe".Journal of the American Chemical Society 138.7(2016):2366-2373.