题名 | Cesium Doped NiOx as an Efficient Hole Extraction Layer for Inverted Planar Perovskite Solar Cells |
作者 | |
通讯作者 | Djurisic, Aleksandra B.; He, Zhu-Bing |
发表日期 | 2017-10-11
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DOI | |
发表期刊 | |
ISSN | 1614-6832
|
EISSN | 1614-6840
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卷号 | 7期号:19 |
摘要 | Organic-inorganic hybrid perovskite solar cells have resulted in tremendous interest in developing next generation photovoltaics due to high record efficiency exceeding 22%. For inverted structure perovskite solar cells, the hole extraction layers play a significant role in achieving efficient and stable perovskite solar cell by modifying charge extraction, interfacial recombination losses, and band alignment. Here, cesium doped NiOx is selected as a hole extraction layer to study the impact of Cs dopant on the optoelectronic properties of NiOx and the photovoltaic performance. Cs doped NiOx films are prepared by a simple solution-based method. Both doped and undoped NiOx films are smooth and highly transparent, while the Cs doped NiOx exhibits better electron conductivity and higher work function. Therefore, Cs doping results in a significant improvement in the performance of NiOx-based inverted planar perovskite solar cells. The best efficiency of Cs doped NiOx devices is 19.35%, and those devices show high stability as well. The improved efficiency in devices with Cs:NiOx is attributed to a significant improvement in the hole extraction and better band alignment compared to undoped NiOx. This work reveals that Cs doped NiOx is very promising hole extraction material for high and stable inverted perovskite solar cells. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
重要成果 | ESI高被引
|
学校署名 | 通讯
|
资助项目 | Shenzhen Key Laboratory Project[ZDSYS201602261933302]
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WOS研究方向 | Chemistry
; Energy & Fuels
; Materials Science
; Physics
|
WOS类目 | Chemistry, Physical
; Energy & Fuels
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
WOS记录号 | WOS:000414918700028
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出版者 | |
EI入藏号 | 20172403768688
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EI主题词 | Cesium Compounds
; Efficiency
; Extraction
; Nickel Oxide
; Organometallics
; Perovskite
; Perovskite Solar Cells
; Semiconductor Doping
; Solar Power Generation
|
EI分类号 | Minerals:482.2
; Solar Power:615.2
; Solar Cells:702.3
; Semiconducting Materials:712.1
; Chemical Operations:802.3
; Organic Compounds:804.1
; Inorganic Compounds:804.2
; Production Engineering:913.1
|
来源库 | Web of Science
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引用统计 |
被引频次[WOS]:372
|
成果类型 | 期刊论文 |
条目标识符 | http://kc.sustech.edu.cn/handle/2SGJ60CL/28536 |
专题 | 工学院_材料科学与工程系 |
作者单位 | 1.Univ Hong Kong, Dept Phys, Pokfulam, Hong Kong, Peoples R China 2.Southern Univ Sci & Technol, Shenzhen Key Lab Full Spectral Solar Elect Genera, Dept Mat Sci & Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China 3.Univ Hong Kong, Dept Chem, Pokfulam, Hong Kong, Peoples R China |
第一作者单位 | 材料科学与工程系 |
通讯作者单位 | 材料科学与工程系 |
推荐引用方式 GB/T 7714 |
Chen, Wei,Liu, Fang-Zhou,Feng, Xi-Yuan,et al. Cesium Doped NiOx as an Efficient Hole Extraction Layer for Inverted Planar Perovskite Solar Cells[J]. Advanced Energy Materials,2017,7(19).
|
APA |
Chen, Wei,Liu, Fang-Zhou,Feng, Xi-Yuan,Djurisic, Aleksandra B.,Chan, Wai Kin,&He, Zhu-Bing.(2017).Cesium Doped NiOx as an Efficient Hole Extraction Layer for Inverted Planar Perovskite Solar Cells.Advanced Energy Materials,7(19).
|
MLA |
Chen, Wei,et al."Cesium Doped NiOx as an Efficient Hole Extraction Layer for Inverted Planar Perovskite Solar Cells".Advanced Energy Materials 7.19(2017).
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
aenm.201700722.pdf(2971KB) | -- | -- | 限制开放 | -- |
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