Educational Background:

• 1979.09—1983.07: Bachelor of Science in Semiconductor Physics, Department of Physics, Lanzhou University

• 1983.09—1986.02: Master of Engineering in Semiconductor Physics and Devices, Hebei Semiconductor Research Institute (China Electronics Technology Group Corporation No. 13 Research Institute)

• 1989.04—1990.03: Advanced studies at the University of Tokyo, Japan

• 1990.04—1994.06: Doctor of Engineering in Applied Physics, Graduate School of Engineering, University of Tokyo, Japan

Work Experience:

• 1986.03—1989.03: Hebei Semiconductor Research Institute (China Electronics Technology Group Corporation No. 13 Research Institute)

• 1994.07—1998.03: Researcher at RIKEN, Japan

• 1998.03—1999.03: Group leader of the Electronic Device Research Institute, Sharp Corporation, Japan

• 1999.04—2005.03: Researcher at RIKEN, Japan

• 2005.04—2005.12: Researcher at Japan Science and Technology Agency; Researcher at RIKEN

• 2006.01—2008.07: Minjiang Scholar Distinguished Professor (PhD Supervisor), School of Physics and Mechanical Engineering,  Xiamen University

• 2008.07—2011.08: Deputy Director of the Pen-Tung Sah Micro/Nano Technology Research Center ; Minjiang Scholar Distinguished Professor, School of Physics and Mechanical Engineering, Xiamen University

• 2011.08—2013.01: Minjiang Scholar Distinguished Professor, School of Physics and Mechanical Engineering, Xiamen University

• 2013.01—2013.02: Minjiang Scholar Distinguished Professor, School of Information Science and Technology, Xiamen University

• 2013.02—2017.09: Head of the Department of  Electronic Engineering, School of Information Science and Technology, Xiamen University; Minjiang Scholar Distinguished Professor

• 2017.09—2023.12.26: Deputy Dean of the School of  Electronic Science and Engineering(National Model Microelectronics College), Xiamen University; Nanqiang Outstanding Professor

• 2023.12.28—Present: Institute of Nanoscience and Applications, Southern University of Science and Technology

Major Achievements:

Professor Zhang has long been engaged in semiconductor-related research, including InP, GaAs, ZnSe, and ZnO. Since returning to China in 2006, he has focused on research in third-generation semiconductor GaN materials and devices, particularly blue-green vertical-cavity surface-emitting lasers (VCSELs) and new-functional LEDs. He is the only group leader on the mainland developing this device and is internationally recognized for his work on green VCSELs. He extended the emission wavelength of this device from the previously reported 503 nm to 565 nm using quantum dots, achieving continuous room-temperature lasing with the lowest threshold current ever reported. He invented a new method for realizing green VCSELs by coupling localized states in blue light quantum wells with resonator modes. He also achieved room-temperature lasing of exciton-polaritons in InGaN quantum wells for the first time and developed a deep ultraviolet VCSEL at 276 nm.

He has published over 200 papers and holds more than 20 authorized invention patents.

Current Research Projects (Principal Investigator):

• National Natural Science Foundation of China, Key Project (Research on Key Technologies of GaN-based Ultraviolet VCSELs, 2023.01-2027.12)

• National Natural Science Foundation of China, Joint Fund Project (Research on GaN-based Green VCSELs, 2022.01-2025.12)

• Joint Laboratory Project (Joint Laboratory for Advanced Optoelectronic Devices and Applications, SUSTech Institute of Nanoscience and Applications - Jiangxi Derui Photoelectric Technology Co., Ltd., 2024.08-2029.07)

Completed Projects (Principal Investigator):

• National 863 Project

• National Key R&D Program Project

• National Natural Science Foundation of China, Joint Fund Project (2016.01-2019.12)

• National Natural Science Foundation of China, General Projects (4 projects in total)

• Basic Science Challenge Project

• Project of Xiamen Science and Technology Bureau

Honors and Awards:

• Third Prize in Natural Science, Fujian Province

• Second Prize for Scientific and Technological Progress, Guangdong Province

• Selected as a Highly Cited Researcher in China by Elsevier (2014-2024)

• Minjiang Scholar Distinguished Professor, Fujian Province

• High-level A-class Talent, Fujian Province

• Thousand Talents Program, Sichuan Province

• Nanqiang Outstanding Professor, Xiamen University

• Distinguished A-class Position under the Pengcheng Peacock Plan, Shenzhen

• Executive Editor of SCI journal Semiconductor Science and Technology, Editorial Board Member of Nano-Micro Letters, and Editorial Board Member of EI-indexed journal Journal of Luminescence

• Member of the Academic Committee of the Ministry of Education's Key Laboratory of  Ultraviolet Emission Materials and Technology and Key Laboratory of Light Emission and Optical Information Technology

• Program Committee Member for international conferences in the field of nitride semiconductors: ICNS (International Conference on Nitride Semiconductors),  IWN (International Workshop on Nitride Semiconductors), and APWS (Asia-Pacific Workshop on Widegap Semiconductors)

• Former Member of the 12th Xiamen Municipal Political Consultative Conference

Selected Publications:

1.  W. Ou, Y. Mei, H. Long, Y. K. Wang, T. Yang, Y. H. Chen, L. Y. Ying, Z. M. Zheng and B. P. Zhang, "Orthogonally and linearly polarized green emission from a semipolar InGaN based microcavity" Nanophotonics, 13(2023): 75-83.

2. T. Yang, Y. H. Chen, Y. C. Wang, W. Ou, L. Y. Ying, Y. Mei, A. Q. Tian, J. P. Liu, H. C. Guo and B. P. Zhang, "Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity", Nano-Micro Letters, 15(2023): 223.

3. X. Hou, T. Yang, S. S. Fan, H. Xu, D. Lida, Y. J. Liu, Y. Mei, G. E. Weng, S. Q. Chen, Weng, B. P. Zhang and K. Ohkawa, "Optical properties of InGaN-based red multiple quantum wells", Applied physics letters, 26(2022): 120.

4. Z. M. Zheng, Y. K. Wang, J. Hoo, S. P. Guo, Y. Mei, H. Long, L. Y. Ying, Z. W. Zheng and B. P. Zhang* “High-quality AlGaN epitaxial structures and realization of UVC vertical cavity surface-emitting lasers”, SCIENCE CHINA Materials, 66（2023）1978-1988.

5. Z. L. Lin, Y. Man, Z. Y. Lv, B. P. Zhang, H. Xu, D. Q. Yu, X. C. Yang, Y. He, X. W. Shi, L. Y. Ying and D. Zhang*, "High-Gain of NdIII Complex Doped Optical Waveguide Amplifiers at 1.06 and 1.31 µm Wavelengths Based on Intramolecular Energy Transfer Mechanism", Advanced Materials, 35(2023):2209239.

6. M.Yuan, M. K. Zhang, Z. Fu, S. Han, Y. N. Zhang, S. X.Wu, R. D. Hong, X. P. Chen, B. P. Zhang, J. Chen Wang and F. Zhang, "Metal-Semiconductor-Metal Ultraviolet Photodetectors Based on Al Nanoparticle in 4H-SiC Microholes", ACS Appl. Nano Mater, 6(2023) :11.

7. Y. Mei, M. C. Xie, T. Yang, X. Hou, W. Ou, H. Long, L. Y. Ying, Y. J. Liu, G. E. Weng, S. Q. Chen and B. P. Zhang, “Improvement of the Emission Intensity of GaN-Based Micro-Light Emitting Diodes by a Suspended Structure”, ACS Photonics 2022, 9, 3967−3973.

8. Y. Mei, M. C. Xie, H. Long, L. Y. Ying, B. P. Zhang, "Low threshold GaN-based microdisk lasers on Silicon with high Q factor", J. Lightwave Technology, 40.9 (2022): 2952-2958.

9.  (Invited) Yukun Wang, Chongming Zheng, Hao Long, Yang Mei, and Baoping Zhang, “Development and Challenges of Nitride Vertical Cavity Surface Emitting Lasers” Photonics Letters, 51.2 (2022): 0251203.

10. S. Yang, H. Xu, H. Long, L. Y. Ying, R. H. Luo, M. J. Zhong, W. R. Lu, X. Hou, Y. Mei, B. P. Zhang, "GaN-Based Green Resonant-Cavity Light-Emitting Diodes with Al mirror and copper plate ", Optics Letters, 47.11 (2022): 2858-2861.

11. W. Ou, Y. Mei, Daisuke Iida, H. Xu, M. C. Xie, Y. W. Wang, L. Y. Ying, B. P. Zhang, Kazuhiro Ohkawa, "InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes"，J. Lightwave Technology, 40.13 (2022): 4337-4343.

12. X. Hou, S. S. Fan, H. Xu, Daisuke Iida, Y. J. Liu, Y. Mei, G. E. Weng, S. Q. Chen B. P. Zhang, K. Ohkawa, "Optical properties of InGaN-based red multiple quantum wells", Applied Physics Letters, 120.26 (2022): 261102.

13. Y. Mei, Y. H. Chen, L.Y. Ying, A. Q. Tian, G. E. Weng, H. Long, J. P. Liu and B. P. Zhang, "Dual-wavelength switching in InGaN quantum dot micro-cavity light-emitting diodes", Optics Express, 30.15 (2022): 27472-27481.

14. X. R. Luo, B. P. Zhang, Y. H. Lu, Y. Mei and L. Shen, "Advances in application of ultraviolet irradiation for biofilm control in water and wastewater infrastructure", Journal of Hazardous Materials, 421 (2022): 126682.

15. Y. Mei, Y. H. Chen, L. Y. Ying, Z. W. Zheng, H. Long, B. P. Zhang, "High Q factor Electrically Injected Green Micro Cavity", J. Lightwave Technology, 39.9 (2021): 2895-2900.

16. Z. M. Zheng, Y. Mei, H. Long, H. Jason, S. P. Guo, Q. X. Li, L.Y. Ying, Z. W. Zheng and B. P. Zhang, "AlGaN-based deep ultraviolet vertical cavity surface emitting laser", IEEE Electron Device Letters, 42.3 (2021): 375-378.

17. Y. Mei, T. R. Yang, W. Ou, Z. M. Zheng, H. Long, L. Y. Ying, B. P. Zhang, "Low-threshold wavelength-tunable ultraviolet vertical-cavity surface-emitting lasers from 376 to 409 nm", Fundamental Research, 1.6 (2021): 684-690.

18. X. Hou, S. S. Fan, D. Iida, Y. Mei, B. P. Zhang*, K. Ohkawa, "Photoluminescence of InGaN-based red multiple quantum wells", Optics Express, 29.19 (2021): 30237-30243.

19. J. Z. Wu, H. Long*, X. L. Shi, S. Luo, Z. H. Chen, Z. C. Feng, L. Y. Ying, Z. W. Zheng and B. P. Zhang, "Polariton lasing in InGaN quantum wells at room temperature", Opto-Electron Adv, 2.12 (2019): 190014-1.

20. (Invited) Y. Mei, R. B. Xu, L. Y. Ying, J. P. Liu, Z.W. Zheng, H. Long, B. P. Zhang, "Room temperature continuous wave lasing of GaN-based green vertical-cavity surface-emitting lasers", Gallium Nitride Materials and Devices XIV, 10918 (2019): 109181H; SPIE OPTO, 2019, San Francisco, California, United States

21. P. O. Nyangaresi, Y. Qin, G. L. Chen, B. P. Zhang, Y. H. Lu, and L. Shen "Comparison of the performance of pulsed and continuous UVC-LED irradiation in the inactivation of bacteria”, Water Research, 157 (2019): 218-227.

22. P. O. Nyangaresi, Y. Qin, G. L. Chen, B. P. Zhang, Y. H. Lu, and L. Shen, "Effects of single and combined UV-LEDs on inactivation and subsequent reactivation of E. coli in water disinfection", Water Research, 147 (2018): 331-341.

23.  (REVIEW) H. C. Yu, Z. W. Zheng, Y. Mei, R. B. Xu, J. P. Liu, H. Yang, B. P. Zhang, T. C. Lu, and H. C. Kuo, "Progress and prospects of GaN-based VCSEL from near UV to green emission", Progress in Quantum Electronics, 57 (2018): 1–19.

24. Y. Mei, G. E. Weng, B. P. Zhang, J. P. Liu, W. Hofmann, L. Y. Ying, J. Y. Zhang, Z. C. Li, H. Yang and H. C. Kuo, "Quantum dot vertical-cavity surface-emitting lasers covering the “green gap”", Light: Science & Applications. 6.1 (2017): e16199.